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2N2219

2N2219

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Central Semiconductor

Part Number:: 2N2219

Manufacturer/Brand:: Central Semiconductor

Product Description:: TRANS NPN 30V 0.8A TO-39

Datasheets:: 2N2219.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 83607 pcs stock

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In Stock 83607 pcs Reference Price(In US Dollars)

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2N2219

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Specifications of 2N2219

Central Semiconductor

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Part Number	2N2219	Manufacturer	Central Semiconductor
Description	TRANS NPN 30V 0.8A TO-39	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	83607 pcs stock	Data sheet	2N2219.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-39
Series	-	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	2N2219 LEAD FREE 2N2219 PBFREE 2N2219CS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Bipolar (BJT) Transistor NPN 30V 800mA 250MHz 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA (ICBO)
Current - Collector (Ic) (Max)	800mA

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Part Number	2N2219	Manufacturer	Central Semiconductor
Description	TRANS NPN 30V 0.8A TO-39	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	83607 pcs stock	Data sheet	2N2219.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-39
Series	-	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	2N2219 LEAD FREE 2N2219 PBFREE 2N2219CS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Bipolar (BJT) Transistor NPN 30V 800mA 250MHz 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA (ICBO)
Current - Collector (Ic) (Max)	800mA