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2N2222AE4

2N2222AE4

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Microsemi

Part Number:: 2N2222AE4

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 50V 0.8A TO-18

Datasheets:: 2N2222AE4.pdf

RoHs Status:: 19030 pcs stock

Stock Condition:: 0 pcs stock

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Specifications of 2N2222AE4

Microsemi

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Part Number	2N2222AE4	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A TO-18	Lead Free Status / RoHS Status
Quantity Available	19030 pcs stock	Data sheet	2N2222AE4.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-18
Series	-	Power - Max	500mW
Package / Case	TO-206AA, TO-18-3 Metal Can	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Manufacturer Standard Lead Time	8 Weeks
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	800mA

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Part Number	2N2222AE4	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A TO-18	Lead Free Status / RoHS Status
Quantity Available	19030 pcs stock	Data sheet	2N2222AE4.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-18
Series	-	Power - Max	500mW
Package / Case	TO-206AA, TO-18-3 Metal Can	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Manufacturer Standard Lead Time	8 Weeks
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	800mA