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2N3019

2N3019

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Microsemi

Part Number:: 2N3019

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 80V 1A TO-5

Datasheets:: 2N3019.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 6661 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 6661 pcs Reference Price(In US Dollars)

1 pcs
$7.936
10 pcs
$7.34
25 pcs
$6.745
100 pcs
$6.269
250 pcs
$5.753

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2N3019

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Specifications of 2N3019

Microsemi

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Part Number	2N3019	Manufacturer	Microsemi
Description	TRANS NPN 80V 1A TO-5	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	6661 pcs stock	Data sheet	2N3019.pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-5
Series	-	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AA, TO-5-3 Metal Can
Other Names	2N3019MS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	12 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	1A

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Part Number	2N3019	Manufacturer	Microsemi
Description	TRANS NPN 80V 1A TO-5	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	6661 pcs stock	Data sheet	2N3019.pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-5
Series	-	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AA, TO-5-3 Metal Can
Other Names	2N3019MS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	12 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	1A