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2N3962

2N3962

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• Specifications

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AMI Semiconductor / ON Semiconductor

Specifications of 2N3962

AMI Semiconductor / ON Semiconductor

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Part Number	2N3962	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	PNP LL LN AMP TRANSISTOR	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4879 pcs stock	Data sheet	2N3962.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA
Transistor Type	PNP	Supplier Device Package	TO-18
Series	-	Power - Max	360mW
Packaging	Bulk	Package / Case	TO-206AA, TO-18-3 Metal Can
Operating Temperature	-	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor PNP 60V 200mA 360mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	Current - Collector Cutoff (Max)	10nA
Current - Collector (Ic) (Max)	200mA	Base Part Number	2N3962

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• Part Number	2N3962	Manufacturer	AMI Semiconductor / ON Semiconductor
  Description	PNP LL LN AMP TRANSISTOR	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
  Quantity Available	4879 pcs stock	Data sheet	2N3962.pdf
  Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA
  Transistor Type	PNP	Supplier Device Package	TO-18
  Series	-	Power - Max	360mW
  Packaging	Bulk	Package / Case	TO-206AA, TO-18-3 Metal Can
  Operating Temperature	-	Mounting Type	Through Hole
  Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
  Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor PNP 60V 200mA 360mW Through Hole TO-18
  DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	Current - Collector Cutoff (Max)	10nA
  Current - Collector (Ic) (Max)	200mA	Base Part Number	2N3962

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