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2N5551

2N5551

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AMI Semiconductor / ON Semiconductor

Part Number:: 2N5551

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 160V 0.6A TO-92

Datasheets:: 2N5551.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 4263 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2N5551

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Specifications of 2N5551

AMI Semiconductor / ON Semiconductor

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Part Number	2N5551	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 160V 0.6A TO-92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4263 pcs stock	Data sheet	2N5551.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Other Names	2N5551OS	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	300MHz
Detailed Description	Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	50nA (ICBO)	Current - Collector (Ic) (Max)	600mA
Base Part Number	2N5551

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Part Number	2N5551	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 160V 0.6A TO-92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4263 pcs stock	Data sheet	2N5551.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Other Names	2N5551OS	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	300MHz
Detailed Description	Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	50nA (ICBO)	Current - Collector (Ic) (Max)	600mA
Base Part Number	2N5551