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2SA1761,T6F(J

2SA1761,T6F(J

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Toshiba Semiconductor and Storage

Part Number:: 2SA1761,T6F(J

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PNP 3A 50V TO226-3

Datasheets:: 2SA1761,T6F(J.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5014 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SA1761,T6F(J

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Specifications of 2SA1761,T6F(J

Toshiba Semiconductor and Storage

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Part Number	2SA1761,T6F(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 3A 50V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5014 pcs stock	Data sheet	2SA1761,T6F(J.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	500mV @ 75mA, 1.5A
Transistor Type	PNP	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SA1761T6F(J 2SA1761T6FJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor PNP 50V 3A 100MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	3A

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Part Number	2SA1761,T6F(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 3A 50V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5014 pcs stock	Data sheet	2SA1761,T6F(J.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	500mV @ 75mA, 1.5A
Transistor Type	PNP	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SA1761T6F(J 2SA1761T6FJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor PNP 50V 3A 100MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	3A