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2SA1930(LBS2MATQ,M

2SA1930(LBS2MATQ,M

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Toshiba Semiconductor and Storage

Specifications of 2SA1930(LBS2MATQ,M

Toshiba Semiconductor and Storage

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Part Number	2SA1930(LBS2MATQ,M	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 2A 180V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4409 pcs stock	Data sheet	2SA1930(LBS2MATQ,M.pdf
Voltage - Collector Emitter Breakdown (Max)	180V	Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
Transistor Type	PNP	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SA1930(LBS2MATQM 2SA1930LBS2MATQM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Bipolar (BJT) Transistor PNP 180V 2A 200MHz 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Current - Collector Cutoff (Max)	5µA (ICBO)	Current - Collector (Ic) (Max)	2A

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• Part Number	2SA1930(LBS2MATQ,M	Manufacturer	Toshiba Semiconductor and Storage
  Description	TRANS PNP 2A 180V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Quantity Available	4409 pcs stock	Data sheet	2SA1930(LBS2MATQ,M.pdf
  Voltage - Collector Emitter Breakdown (Max)	180V	Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
  Transistor Type	PNP	Supplier Device Package	TO-220NIS
  Series	-	Power - Max	2W
  Packaging	Bulk	Package / Case	TO-220-3 Full Pack
  Other Names	2SA1930(LBS2MATQM 2SA1930LBS2MATQM	Operating Temperature	150°C (TJ)
  Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
  Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
  Detailed Description	Bipolar (BJT) Transistor PNP 180V 2A 200MHz 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
  Current - Collector Cutoff (Max)	5µA (ICBO)	Current - Collector (Ic) (Max)	2A

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