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2SA1931,NETQ(J

2SA1931,NETQ(J

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Toshiba Semiconductor and Storage

Part Number:: 2SA1931,NETQ(J

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PNP 5A 50V TO220-3

Datasheets:: 2SA1931,NETQ(J.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4540 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SA1931,NETQ(J

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Specifications of 2SA1931,NETQ(J

Toshiba Semiconductor and Storage

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Part Number	2SA1931,NETQ(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 5A 50V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4540 pcs stock	Data sheet	2SA1931,NETQ(J.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	400mV @ 200mA, 2A
Transistor Type	PNP	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SA1931NETQ(J 2SA1931NETQJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	60MHz
Detailed Description	Bipolar (BJT) Transistor PNP 50V 5A 60MHz 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A, 1V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	5A

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Part Number	2SA1931,NETQ(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 5A 50V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4540 pcs stock	Data sheet	2SA1931,NETQ(J.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	400mV @ 200mA, 2A
Transistor Type	PNP	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SA1931NETQ(J 2SA1931NETQJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	60MHz
Detailed Description	Bipolar (BJT) Transistor PNP 50V 5A 60MHz 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A, 1V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	5A