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2SA1954-A(TE85L,F)

2SA1954-A(TE85L,F)

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Toshiba Semiconductor and Storage

Part Number:: 2SA1954-A(TE85L,F)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PNP 12V 0.5A USM

Datasheets:: 2SA1954-A(TE85L,F).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4875 pcs stock

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2SA1954-A(TE85L,F)

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Specifications of 2SA1954-A(TE85L,F)

Toshiba Semiconductor and Storage

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Part Number	2SA1954-A(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 12V 0.5A USM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4875 pcs stock	Data sheet	2SA1954-A(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	12V	Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 200mA
Transistor Type	PNP	Supplier Device Package	USM
Series	-	Power - Max	100mW
Packaging	Cut Tape (CT)	Package / Case	SC-70, SOT-323
Other Names	2SA1954-A(TE85LF)CT	Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	130MHz
Detailed Description	Bipolar (BJT) Transistor PNP 12V 500mA 130MHz 100mW Surface Mount USM	DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 10mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	500mA

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Part Number	2SA1954-A(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 12V 0.5A USM	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4875 pcs stock	Data sheet	2SA1954-A(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	12V	Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 200mA
Transistor Type	PNP	Supplier Device Package	USM
Series	-	Power - Max	100mW
Packaging	Cut Tape (CT)	Package / Case	SC-70, SOT-323
Other Names	2SA1954-A(TE85LF)CT	Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	130MHz
Detailed Description	Bipolar (BJT) Transistor PNP 12V 500mA 130MHz 100mW Surface Mount USM	DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 10mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	500mA