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2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

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Toshiba Semiconductor and Storage

Part Number:: 2SA965-O(TE6,F,M)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PNP 800MA 120V TO226-3

Datasheets:: 2SA965-O(TE6,F,M).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5100 pcs stock

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2SA965-O(TE6,F,M)

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Specifications of 2SA965-O(TE6,F,M)

Toshiba Semiconductor and Storage

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Part Number	2SA965-O(TE6,F,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 800MA 120V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5100 pcs stock	Data sheet	2SA965-O(TE6,F,M).pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	PNP	Supplier Device Package	LSTM
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SA965-O(TE6FM) 2SA965OTE6FM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	120MHz
Detailed Description	Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole LSTM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	800mA

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Part Number	2SA965-O(TE6,F,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 800MA 120V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5100 pcs stock	Data sheet	2SA965-O(TE6,F,M).pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	PNP	Supplier Device Package	LSTM
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SA965-O(TE6FM) 2SA965OTE6FM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	120MHz
Detailed Description	Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole LSTM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	800mA