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2SB1216T-E

2SB1216T-E

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AMI Semiconductor / ON Semiconductor

Part Number:: 2SB1216T-E

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS PNP 100V 4A TP

Datasheets:: 2SB1216T-E.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 159481 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 159481 pcs Reference Price(In US Dollars)

1000 pcs
$0.131

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2SB1216T-E

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Specifications of 2SB1216T-E

AMI Semiconductor / ON Semiconductor

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Part Number	2SB1216T-E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 100V 4A TP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	159481 pcs stock	Data sheet	2SB1216T-E.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Transistor Type	PNP	Supplier Device Package	TP
Series	-	Power - Max	1W
Packaging	Bulk	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	130MHz	Detailed Description	Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 5V	Current - Collector Cutoff (Max)	1µA (ICBO)
Current - Collector (Ic) (Max)	4A	Base Part Number	2SB1216

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Part Number	2SB1216T-E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 100V 4A TP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	159481 pcs stock	Data sheet	2SB1216T-E.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Transistor Type	PNP	Supplier Device Package	TP
Series	-	Power - Max	1W
Packaging	Bulk	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	130MHz	Detailed Description	Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 5V	Current - Collector Cutoff (Max)	1µA (ICBO)
Current - Collector (Ic) (Max)	4A	Base Part Number	2SB1216