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2SB1457,T6TOTOF(J

2SB1457,T6TOTOF(J

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Toshiba Semiconductor and Storage

Part Number:: 2SB1457,T6TOTOF(J

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PNP 2A 100V TO226-3

Datasheets:: 2SB1457,T6TOTOF(J.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4277 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SB1457,T6TOTOF(J

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Specifications of 2SB1457,T6TOTOF(J

Toshiba Semiconductor and Storage

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Part Number	2SB1457,T6TOTOF(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 2A 100V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4277 pcs stock	Data sheet	2SB1457,T6TOTOF(J.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A
Transistor Type	PNP	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SB1457T6TOTOF(J 2SB1457T6TOTOFJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	50MHz
Detailed Description	Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 2V
Current - Collector Cutoff (Max)	10µA (ICBO)	Current - Collector (Ic) (Max)	2A

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Part Number	2SB1457,T6TOTOF(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 2A 100V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4277 pcs stock	Data sheet	2SB1457,T6TOTOF(J.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A
Transistor Type	PNP	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SB1457T6TOTOF(J 2SB1457T6TOTOFJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	50MHz
Detailed Description	Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 2V
Current - Collector Cutoff (Max)	10µA (ICBO)	Current - Collector (Ic) (Max)	2A