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2SB817C-1E

2SB817C-1E

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AMI Semiconductor / ON Semiconductor

Part Number:: 2SB817C-1E

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS PNP 140V 12A

Datasheets:: 2SB817C-1E.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 65955 pcs stock

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2SB817C-1E

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Specifications of 2SB817C-1E

AMI Semiconductor / ON Semiconductor

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Part Number	2SB817C-1E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 140V 12A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	65955 pcs stock	Data sheet	2SB817C-1E.pdf
Voltage - Collector Emitter Breakdown (Max)	140V	Vce Saturation (Max) @ Ib, Ic	2V @ 500mA, 5A
Transistor Type	PNP	Supplier Device Package	TO-3P-3L
Series	-	Power - Max	120W
Packaging	Tube	Package / Case	TO-3P-3, SC-65-3
Other Names	2SB817C-1E-ND 2SB817C-1EOS	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	10MHz	Detailed Description	Bipolar (BJT) Transistor PNP 140V 12A 10MHz 120W Through Hole TO-3P-3L
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A, 5V	Current - Collector Cutoff (Max)	100µA (ICBO)
Current - Collector (Ic) (Max)	12A

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Part Number	2SB817C-1E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 140V 12A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	65955 pcs stock	Data sheet	2SB817C-1E.pdf
Voltage - Collector Emitter Breakdown (Max)	140V	Vce Saturation (Max) @ Ib, Ic	2V @ 500mA, 5A
Transistor Type	PNP	Supplier Device Package	TO-3P-3L
Series	-	Power - Max	120W
Packaging	Tube	Package / Case	TO-3P-3, SC-65-3
Other Names	2SB817C-1E-ND 2SB817C-1EOS	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	10MHz	Detailed Description	Bipolar (BJT) Transistor PNP 140V 12A 10MHz 120W Through Hole TO-3P-3L
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A, 5V	Current - Collector Cutoff (Max)	100µA (ICBO)
Current - Collector (Ic) (Max)	12A