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2SC2383-O,T6ALPF(M

2SC2383-O,T6ALPF(M

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Toshiba Semiconductor and Storage

Part Number:: 2SC2383-O,T6ALPF(M

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 1A 160V TO226-3

Datasheets:: 2SC2383-O,T6ALPF(M.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4465 pcs stock

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2SC2383-O,T6ALPF(M

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Specifications of 2SC2383-O,T6ALPF(M

Toshiba Semiconductor and Storage

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Part Number	2SC2383-O,T6ALPF(M	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 1A 160V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4465 pcs stock	Data sheet	2SC2383-O,T6ALPF(M.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SC2383-OT6ALPF(M 2SC2383OT6ALPFM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor NPN 160V 1A 100MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 200mA, 5V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	1A

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Part Number	2SC2383-O,T6ALPF(M	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 1A 160V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4465 pcs stock	Data sheet	2SC2383-O,T6ALPF(M.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SC2383-OT6ALPF(M 2SC2383OT6ALPFM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor NPN 160V 1A 100MHz 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 200mA, 5V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	1A