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2SC2705-O(TE6,F,M)

2SC2705-O(TE6,F,M)

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Toshiba Semiconductor and Storage

Part Number:: 2SC2705-O(TE6,F,M)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 150V 0.05A TO-92MOD

Datasheets:: 2SC2705-O(TE6,F,M).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4945 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SC2705-O(TE6,F,M)

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Specifications of 2SC2705-O(TE6,F,M)

Toshiba Semiconductor and Storage

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Part Number	2SC2705-O(TE6,F,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 150V 0.05A TO-92MOD	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4945 pcs stock	Data sheet	2SC2705-O(TE6,F,M).pdf
Voltage - Collector Emitter Breakdown (Max)	150V	Vce Saturation (Max) @ Ib, Ic	1V @ 1mA, 10mA
Transistor Type	NPN	Supplier Device Package	LSTM
Series	-	Power - Max	800mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 Long Body
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Bipolar (BJT) Transistor NPN 150V 50mA 200MHz 800mW Through Hole LSTM
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	50mA

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Part Number	2SC2705-O(TE6,F,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 150V 0.05A TO-92MOD	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4945 pcs stock	Data sheet	2SC2705-O(TE6,F,M).pdf
Voltage - Collector Emitter Breakdown (Max)	150V	Vce Saturation (Max) @ Ib, Ic	1V @ 1mA, 10mA
Transistor Type	NPN	Supplier Device Package	LSTM
Series	-	Power - Max	800mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 Long Body
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Bipolar (BJT) Transistor NPN 150V 50mA 200MHz 800mW Through Hole LSTM
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	50mA