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2SC2859-O(TE85L,F)

2SC2859-O(TE85L,F)

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Toshiba Semiconductor and Storage

Part Number:: 2SC2859-O(TE85L,F)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 30V 0.5A S-MINI

Datasheets:: 2SC2859-O(TE85L,F).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4475 pcs stock

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2SC2859-O(TE85L,F)

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Specifications of 2SC2859-O(TE85L,F)

Toshiba Semiconductor and Storage

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Part Number	2SC2859-O(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 30V 0.5A S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4475 pcs stock	Data sheet	2SC2859-O(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Transistor Type	NPN	Supplier Device Package	S-Mini
Series	-	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	2SC2859-O(TE85LF)CT	Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	300MHz
Detailed Description	Bipolar (BJT) Transistor NPN 30V 500mA 300MHz 150mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 100mA, 1V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	500mA

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Part Number	2SC2859-O(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 30V 0.5A S-MINI	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4475 pcs stock	Data sheet	2SC2859-O(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Transistor Type	NPN	Supplier Device Package	S-Mini
Series	-	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	2SC2859-O(TE85LF)CT	Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	300MHz
Detailed Description	Bipolar (BJT) Transistor NPN 30V 500mA 300MHz 150mW Surface Mount S-Mini	DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 100mA, 1V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	500mA