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2SC3665-Y,T2F(J

2SC3665-Y,T2F(J

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Toshiba Semiconductor and Storage

Part Number:: 2SC3665-Y,T2F(J

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 800MA 120V SC71

Datasheets:: 2SC3665-Y,T2F(J.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4302 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SC3665-Y,T2F(J

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Specifications of 2SC3665-Y,T2F(J

Toshiba Semiconductor and Storage

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Part Number	2SC3665-Y,T2F(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 800MA 120V SC71	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4302 pcs stock	Data sheet	2SC3665-Y,T2F(J.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	MSTM
Series	-	Power - Max	1W
Packaging	Bulk	Package / Case	SC-71
Other Names	2SC3665-YT2F(J 2SC3665YT2FJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	120MHz
Detailed Description	Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 1W Through Hole MSTM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	800mA

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Part Number	2SC3665-Y,T2F(J	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 800MA 120V SC71	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4302 pcs stock	Data sheet	2SC3665-Y,T2F(J.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	MSTM
Series	-	Power - Max	1W
Packaging	Bulk	Package / Case	SC-71
Other Names	2SC3665-YT2F(J 2SC3665YT2FJ	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	120MHz
Detailed Description	Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 1W Through Hole MSTM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	800mA