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2SC5201(TE6,F,M)

2SC5201(TE6,F,M)

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Toshiba Semiconductor and Storage

Part Number:: 2SC5201(TE6,F,M)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 50MA 600V TO226-3

Datasheets:: 2SC5201(TE6,F,M).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5036 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of 2SC5201(TE6,F,M)

Toshiba Semiconductor and Storage

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Part Number	2SC5201(TE6,F,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 50MA 600V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5036 pcs stock	Data sheet	2SC5201(TE6,F,M).pdf
Voltage - Collector Emitter Breakdown (Max)	600V	Vce Saturation (Max) @ Ib, Ic	1V @ 500mA, 20mA
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SC5201(TE6FM) 2SC5201TE6FM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN 600V 50mA 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 20mA, 5V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	50mA

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Part Number	2SC5201(TE6,F,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 50MA 600V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5036 pcs stock	Data sheet	2SC5201(TE6,F,M).pdf
Voltage - Collector Emitter Breakdown (Max)	600V	Vce Saturation (Max) @ Ib, Ic	1V @ 500mA, 20mA
Transistor Type	NPN	Supplier Device Package	TO-92MOD
Series	-	Power - Max	900mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 Long Body
Other Names	2SC5201(TE6FM) 2SC5201TE6FM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN 600V 50mA 900mW Through Hole TO-92MOD	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 20mA, 5V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	50mA