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2SC5706-P-E

2SC5706-P-E

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AMI Semiconductor / ON Semiconductor

Specifications of 2SC5706-P-E

AMI Semiconductor / ON Semiconductor

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Part Number	2SC5706-P-E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 100V 5A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	142903 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	240mV @ 100mA, 2A
Transistor Type	NPN	Supplier Device Package	TP
Series	-	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	-	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	6 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	400MHz
Detailed Description	Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole TP	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	5A

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• Part Number	2SC5706-P-E	Manufacturer	AMI Semiconductor / ON Semiconductor
  Description	TRANS NPN 100V 5A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Quantity Available	142903 pcs stock	Data sheet
  Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	240mV @ 100mA, 2A
  Transistor Type	NPN	Supplier Device Package	TP
  Series	-	Power - Max	800mW
  Packaging	Bulk	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
  Operating Temperature	-	Mounting Type	Through Hole
  Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	6 Weeks
  Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	400MHz
  Detailed Description	Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole TP	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V
  Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	5A

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