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2SC5876T106R

2SC5876T106R

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LAPIS Semiconductor

Part Number:: 2SC5876T106R

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS NPN 60V 0.5A SOT-323

Datasheets:: 2SC5876T106R.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 498216 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SC5876T106R

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Specifications of 2SC5876T106R

LAPIS Semiconductor

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Part Number	2SC5876T106R	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 60V 0.5A SOT-323	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	498216 pcs stock	Data sheet	2SC5876T106R.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Transistor Type	NPN	Supplier Device Package	UMT3
Series	-	Power - Max	200mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	2SC5876T106RTR	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	300MHz	Detailed Description	Bipolar (BJT) Transistor NPN 60V 500mA 300MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 50mA, 2V	Current - Collector Cutoff (Max)	1µA (ICBO)
Current - Collector (Ic) (Max)	500mA	Base Part Number	2SC5876

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Part Number	2SC5876T106R	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 60V 0.5A SOT-323	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	498216 pcs stock	Data sheet	2SC5876T106R.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Transistor Type	NPN	Supplier Device Package	UMT3
Series	-	Power - Max	200mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	2SC5876T106RTR	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	300MHz	Detailed Description	Bipolar (BJT) Transistor NPN 60V 500mA 300MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 50mA, 2V	Current - Collector Cutoff (Max)	1µA (ICBO)
Current - Collector (Ic) (Max)	500mA	Base Part Number	2SC5876