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2SCR502EBTL

2SCR502EBTL

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LAPIS Semiconductor

Part Number:: 2SCR502EBTL

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS NPN 30V 0.5A EMT3F

Datasheets:: 1.2SCR502EBTL.pdf 2.2SCR502EBTL.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 2578422 pcs stock

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2SCR502EBTL

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Specifications of 2SCR502EBTL

LAPIS Semiconductor

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Part Number	2SCR502EBTL	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 30V 0.5A EMT3F	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2578422 pcs stock	Data sheet	1.2SCR502EBTL.pdf 2.2SCR502EBTL.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 200mA
Transistor Type	NPN	Supplier Device Package	EMT3F (SOT-416FL)
Series	-	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SC-89, SOT-490
Other Names	2SCR502EBTLTR	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	40 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	360MHz	Detailed Description	Bipolar (BJT) Transistor NPN 30V 500mA 360MHz 150mW Surface Mount EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 2V	Current - Collector Cutoff (Max)	200nA (ICBO)
Current - Collector (Ic) (Max)	500mA

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Part Number	2SCR502EBTL	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 30V 0.5A EMT3F	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2578422 pcs stock	Data sheet	1.2SCR502EBTL.pdf 2.2SCR502EBTL.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 200mA
Transistor Type	NPN	Supplier Device Package	EMT3F (SOT-416FL)
Series	-	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SC-89, SOT-490
Other Names	2SCR502EBTLTR	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	40 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	360MHz	Detailed Description	Bipolar (BJT) Transistor NPN 30V 500mA 360MHz 150mW Surface Mount EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 2V	Current - Collector Cutoff (Max)	200nA (ICBO)
Current - Collector (Ic) (Max)	500mA