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2SD2129,LS4ALPSQ(M

2SD2129,LS4ALPSQ(M

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Toshiba Semiconductor and Storage

Specifications of 2SD2129,LS4ALPSQ(M

Toshiba Semiconductor and Storage

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Part Number	2SD2129,LS4ALPSQ(M	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 3A 100V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5848 pcs stock	Data sheet	2SD2129,LS4ALPSQ(M.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Transistor Type	NPN	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SD2129LS4ALPSQ(M 2SD2129LS4ALPSQM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1.5A, 3V
Current - Collector Cutoff (Max)	100µA (ICBO)	Current - Collector (Ic) (Max)	3A

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• Part Number	2SD2129,LS4ALPSQ(M	Manufacturer	Toshiba Semiconductor and Storage
  Description	TRANS NPN 3A 100V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Quantity Available	5848 pcs stock	Data sheet	2SD2129,LS4ALPSQ(M.pdf
  Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
  Transistor Type	NPN	Supplier Device Package	TO-220NIS
  Series	-	Power - Max	2W
  Packaging	Bulk	Package / Case	TO-220-3 Full Pack
  Other Names	2SD2129LS4ALPSQ(M 2SD2129LS4ALPSQM	Operating Temperature	150°C (TJ)
  Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
  Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
  Detailed Description	Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1.5A, 3V
  Current - Collector Cutoff (Max)	100µA (ICBO)	Current - Collector (Ic) (Max)	3A

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