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2SD2406-Y(F)

2SD2406-Y(F)

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Toshiba Semiconductor and Storage

Specifications of 2SD2406-Y(F)

Toshiba Semiconductor and Storage

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Part Number	2SD2406-Y(F)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 80V 4A TO220NIS	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4393 pcs stock	Data sheet	2SD2406-Y(F).pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 300mA, 3A
Transistor Type	NPN	Supplier Device Package	TO-220NIS
Series	-	Power - Max	25W
Packaging	Tube	Package / Case	TO-220-3 Full Pack
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	8MHz	Detailed Description	Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Through Hole TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 5V	Current - Collector Cutoff (Max)	30µA (ICBO)
Current - Collector (Ic) (Max)	4A

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• Part Number	2SD2406-Y(F)	Manufacturer	Toshiba Semiconductor and Storage
  Description	TRANS NPN 80V 4A TO220NIS	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Quantity Available	4393 pcs stock	Data sheet	2SD2406-Y(F).pdf
  Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 300mA, 3A
  Transistor Type	NPN	Supplier Device Package	TO-220NIS
  Series	-	Power - Max	25W
  Packaging	Tube	Package / Case	TO-220-3 Full Pack
  Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
  Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Frequency - Transition	8MHz	Detailed Description	Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Through Hole TO-220NIS
  DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 5V	Current - Collector Cutoff (Max)	30µA (ICBO)
  Current - Collector (Ic) (Max)	4A

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