S27KS0641DPBHB023

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Cypress Semiconductor

Part Number:: S27KS0641DPBHB023

Manufacturer/Brand:: Cypress Semiconductor

Product Description:: IC DRAM 64M PARALLEL 166MHZ

Datasheets:: S27KS0641DPBHB023.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 24297 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 24297 pcs Reference Price(In US Dollars)

2500 pcs
$1.345

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S27KS0641DPBHB023

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Specifications of S27KS0641DPBHB023

Cypress Semiconductor

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Part Number	S27KS0641DPBHB023	Manufacturer	Cypress Semiconductor
Description	IC DRAM 64M PARALLEL 166MHZ	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	24297 pcs stock	Data sheet	S27KS0641DPBHB023.pdf
Write Cycle Time - Word, Page	-	Voltage - Supply	1.7 V ~ 1.95 V
Technology	DRAM	Series	Automotive, AEC-Q100, HyperRAM™ KS
Operating Temperature	-40°C ~ 105°C (TA)	Moisture Sensitivity Level (MSL)	3 (168 Hours)
Memory Type	Volatile	Memory Size	64Mb (8M x 8)
Memory Interface	Parallel	Memory Format	DRAM
Manufacturer Standard Lead Time	15 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	DRAM Memory IC 64Mb (8M x 8) Parallel 166MHz 40ns	Clock Frequency	166MHz
Access Time	40ns

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Part Number	S27KS0641DPBHB023	Manufacturer	Cypress Semiconductor
Description	IC DRAM 64M PARALLEL 166MHZ	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	24297 pcs stock	Data sheet	S27KS0641DPBHB023.pdf
Write Cycle Time - Word, Page	-	Voltage - Supply	1.7 V ~ 1.95 V
Technology	DRAM	Series	Automotive, AEC-Q100, HyperRAM™ KS
Operating Temperature	-40°C ~ 105°C (TA)	Moisture Sensitivity Level (MSL)	3 (168 Hours)
Memory Type	Volatile	Memory Size	64Mb (8M x 8)
Memory Interface	Parallel	Memory Format	DRAM
Manufacturer Standard Lead Time	15 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	DRAM Memory IC 64Mb (8M x 8) Parallel 166MHz 40ns	Clock Frequency	166MHz
Access Time	40ns