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A2G35S200-01SR3

A2G35S200-01SR3

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Part Number:: A2G35S200-01SR3

Manufacturer/Brand:: N/A

Product Description:: AIRFAST RF POWER GAN TRANSISTOR

Datasheets:

RoHs Status:: 853 pcs stock

Stock Condition:: 0 pcs stock

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In Stock 0 pcs Reference Price(In US Dollars)

250 pcs
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A2G35S200-01SR3

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Specifications of A2G35S200-01SR3

A2G35S200-01SR3

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Part Number	A2G35S200-01SR3	Manufacturer	NXP Semiconductors / Freescale
Description	AIRFAST RF POWER GAN TRANSISTOR	Lead Free Status / RoHS Status
Quantity Available	853 pcs stock	Data sheet
Voltage - Test	48V	Voltage - Rated	125V
Transistor Type	LDMOS	Supplier Device Package	NI-400S-2S
Series	-	Power - Output	180W
Package / Case	NI-400S-2S	Other Names	935320919118
Noise Figure	-	Gain	16.1dB
Frequency	3.4GHz ~ 3.6GHz	Detailed Description	RF Mosfet LDMOS 48V 291mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S
Current Rating	-	Current - Test	291mA

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Part Number	A2G35S200-01SR3	Manufacturer	NXP Semiconductors / Freescale
Description	AIRFAST RF POWER GAN TRANSISTOR	Lead Free Status / RoHS Status
Quantity Available	853 pcs stock	Data sheet
Voltage - Test	48V	Voltage - Rated	125V
Transistor Type	LDMOS	Supplier Device Package	NI-400S-2S
Series	-	Power - Output	180W
Package / Case	NI-400S-2S	Other Names	935320919118
Noise Figure	-	Gain	16.1dB
Frequency	3.4GHz ~ 3.6GHz	Detailed Description	RF Mosfet LDMOS 48V 291mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S
Current Rating	-	Current - Test	291mA