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UNR42160RA

UNR42160RA

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Panasonic

Part Number:: UNR42160RA

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS NPN 300MW NS-B1

Datasheets:: UNR42160RA.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 468036 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 468036 pcs Reference Price(In US Dollars)

1 pcs
$0.176
10 pcs
$0.139
25 pcs
$0.117
100 pcs
$0.095
250 pcs
$0.079
500 pcs
$0.065
1000 pcs
$0.049
2500 pcs
$0.045

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UNR42160RA

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Specifications of UNR42160RA

Panasonic

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Part Number	UNR42160RA	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 300MW NS-B1	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	468036 pcs stock	Data sheet	UNR42160RA.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	300mW	Packaging	Cut Tape (CT)
Package / Case	NS-B1	Other Names	UNR42160RACT
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	150MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	UNR42160RA	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 300MW NS-B1	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	468036 pcs stock	Data sheet	UNR42160RA.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	300mW	Packaging	Cut Tape (CT)
Package / Case	NS-B1	Other Names	UNR42160RACT
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	150MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA