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DTC943TUBTL

DTC943TUBTL

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LAPIS Semiconductor

Part Number:: DTC943TUBTL

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS NPN 20V 0.2W UMT3F

Datasheets:: 1.DTC943TUBTL.pdf 2.DTC943TUBTL.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1549292 pcs stock

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Specifications of DTC943TUBTL

LAPIS Semiconductor

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Part Number	DTC943TUBTL	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 20V 0.2W UMT3F	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1549292 pcs stock	Data sheet	1.DTC943TUBTL.pdf 2.DTC943TUBTL.pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	UMT3F
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	200mW	Packaging	Tape & Reel (TR)
Package / Case	SC-85	Other Names	DTC943TUBTLTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	35MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 400mA 35MHz 200mW Surface Mount UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce	820 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA (ICBO)
Current - Collector (Ic) (Max)	400mA

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Part Number	DTC943TUBTL	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 20V 0.2W UMT3F	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1549292 pcs stock	Data sheet	1.DTC943TUBTL.pdf 2.DTC943TUBTL.pdf
Voltage - Collector Emitter Breakdown (Max)	20V	Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	UMT3F
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	200mW	Packaging	Tape & Reel (TR)
Package / Case	SC-85	Other Names	DTC943TUBTLTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	35MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 400mA 35MHz 200mW Surface Mount UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce	820 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA (ICBO)
Current - Collector (Ic) (Max)	400mA