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UNR412100A

UNR412100A

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Panasonic

Part Number:: UNR412100A

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS PNP 300MW NS-B1

Datasheets:: UNR412100A.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5294 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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UNR412100A

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Specifications of UNR412100A

Panasonic

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Part Number	UNR412100A	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 300MW NS-B1	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5294 pcs stock	Data sheet	UNR412100A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 100mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	2.2 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	3-SSIP
Other Names	UNR412100ATB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 100mA, 10V	Current - Collector Cutoff (Max)	1µA
Current - Collector (Ic) (Max)	500mA

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Part Number	UNR412100A	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 300MW NS-B1	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5294 pcs stock	Data sheet	UNR412100A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 100mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	2.2 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	3-SSIP
Other Names	UNR412100ATB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 100mA, 10V	Current - Collector Cutoff (Max)	1µA
Current - Collector (Ic) (Max)	500mA