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RN1110ACT(TPL3)

RN1110ACT(TPL3)

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Toshiba Semiconductor and Storage

Part Number:: RN1110ACT(TPL3)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PREBIAS NPN 0.1W CST3

Datasheets:

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1020804 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 1020804 pcs Reference Price(In US Dollars)

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$0.046
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2500 pcs
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RN1110ACT(TPL3)

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Specifications of RN1110ACT(TPL3)

Toshiba Semiconductor and Storage

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Part Number	RN1110ACT(TPL3)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.1W CST3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1020804 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	CST3
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	100mW	Packaging	Cut Tape (CT)
Package / Case	SC-101, SOT-883	Other Names	RN1110ACT(TPL3)CT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	80mA

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Part Number	RN1110ACT(TPL3)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PREBIAS NPN 0.1W CST3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1020804 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	CST3
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	100mW	Packaging	Cut Tape (CT)
Package / Case	SC-101, SOT-883	Other Names	RN1110ACT(TPL3)CT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	80mA