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DTC115GKAT146

DTC115GKAT146

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LAPIS Semiconductor

Part Number:: DTC115GKAT146

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS NPN 200MW SMT3

Datasheets:: DTC115GKAT146.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 3445848 pcs stock

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Specifications of DTC115GKAT146

LAPIS Semiconductor

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Part Number	DTC115GKAT146	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 200MW SMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3445848 pcs stock	Data sheet	DTC115GKAT146.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SMT3
Series	-	Resistor - Base (R1)	100 kOhms
Power - Max	200mW	Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	DTC115GKAT146-ND DTC115GKAT146TR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SMT3	DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 5mA, 5V
Current - Collector Cutoff (Max)	500nA (ICBO)	Current - Collector (Ic) (Max)	100mA
Base Part Number	DTC115

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Part Number	DTC115GKAT146	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 200MW SMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3445848 pcs stock	Data sheet	DTC115GKAT146.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SMT3
Series	-	Resistor - Base (R1)	100 kOhms
Power - Max	200mW	Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	DTC115GKAT146-ND DTC115GKAT146TR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SMT3	DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 5mA, 5V
Current - Collector Cutoff (Max)	500nA (ICBO)	Current - Collector (Ic) (Max)	100mA
Base Part Number	DTC115