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MMUN2135LT1G

MMUN2135LT1G

MMUN2135LT1G
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See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
MMUN2135LT1G
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS PREBIAS PNP 246MW SOT23-3
Datasheets:
MMUN2135LT1G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
2552318 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 2552318 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.046
  • 10 pcs
    $0.04
  • 100 pcs
    $0.022
  • 500 pcs
    $0.014
  • 1000 pcs
    $0.009
Target Price(USD):
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MMUN2135LT1G
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MMUN2135LT1G

Specifications of MMUN2135LT1G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number MMUN2135LT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2552318 pcs stock Data sheet MMUN2135LT1G.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type PNP - Pre-Biased Supplier Device Package SOT-23 (TO-236AB)
Series - Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms Power - Max 246mW
Packaging Cut Tape (CT) Package / Case TO-236-3, SC-59, SOT-23-3
Other Names MMUN2135LT1GOSCT Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 36 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23 (TO-236AB)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA  
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