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RN2116,LF(CT

RN2116,LF(CT

RN2116,LF(CT
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN2116,LF(CT
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS PNP 50V 0.1W SSM
Datasheets:
RN2116,LF(CT.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1883438 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1883438 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.013
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RN2116,LF(CT

Specifications of RN2116,LF(CT

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN2116,LF(CT Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 50V 0.1W SSM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1883438 pcs stock Data sheet RN2116,LF(CT.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type PNP - Pre-Biased Supplier Device Package SSM
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 4.7 kOhms Power - Max 100mW
Packaging Tape & Reel (TR) Package / Case SC-75, SOT-416
Other Names RN2116(T5L,F,T)
RN2116(T5LFT)TR
RN2116(T5LFT)TR-ND
RN2116,LF(CB
RN2116,LF(CTTR
RN2116LF(CBTR
RN2116LF(CBTR-ND
RN2116LF(CTTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
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