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UNR211D00L

UNR211D00L

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Panasonic

Part Number:: UNR211D00L

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS PNP 200MW MINI3

Datasheets:: UNR211D00L.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4999 pcs stock

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UNR211D00L

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Specifications of UNR211D00L

Panasonic

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Part Number	UNR211D00L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 200MW MINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4999 pcs stock	Data sheet	UNR211D00L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	Mini3-G1
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	47 kOhms	Power - Max	200mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	UN211D UN211DCT UN211DCT-ND UNR211D00LCT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	80MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 200mW Surface Mount Mini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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Part Number	UNR211D00L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 200MW MINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4999 pcs stock	Data sheet	UNR211D00L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	Mini3-G1
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	47 kOhms	Power - Max	200mW
Packaging	Cut Tape (CT)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	UN211D UN211DCT UN211DCT-ND UNR211D00LCT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	80MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 200mW Surface Mount Mini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA