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DTB723YETL

DTB723YETL

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LAPIS Semiconductor

Part Number:: DTB723YETL

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS PNP 150MW EMT3

Datasheets:: DTB723YETL.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 803950 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 803950 pcs Reference Price(In US Dollars)

3000 pcs
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Specifications of DTB723YETL

LAPIS Semiconductor

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Part Number	DTB723YETL	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 150MW EMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	803950 pcs stock	Data sheet	DTB723YETL.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	EMT3
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SC-75, SOT-416
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	260MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30V 200mA 260MHz 150mW Surface Mount EMT3	DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 100mA, 2V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	200mA

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Part Number	DTB723YETL	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 150MW EMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	803950 pcs stock	Data sheet	DTB723YETL.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	EMT3
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SC-75, SOT-416
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	260MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30V 200mA 260MHz 150mW Surface Mount EMT3	DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 100mA, 2V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	200mA