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RN1104MFV,L3F

RN1104MFV,L3F

RN1104MFV,L3F
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1104MFV,L3F
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 0.15W VESM
Datasheets:
RN1104MFV,L3F.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
2204527 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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RN1104MFV,L3F
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RN1104MFV,L3F

Specifications of RN1104MFV,L3F

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN1104MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.15W VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2204527 pcs stock Data sheet RN1104MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package VESM
Series - Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-723
Other Names RN1104MFV (TL3,T)
RN1104MFV(TL3,T)
RN1104MFV(TL3T)TR
RN1104MFV(TL3T)TR-ND
RN1104MFV,L3F(B
RN1104MFV,L3F(T
RN1104MFVL3FTR
RN1104MFVTL3T
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA  
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