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UNR411F00A

UNR411F00A

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Panasonic

Part Number:: UNR411F00A

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS PNP 300MW NS-B1

Datasheets:: UNR411F00A.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 4234 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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UNR411F00A

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Specifications of UNR411F00A

Panasonic

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Part Number	UNR411F00A	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 300MW NS-B1	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4234 pcs stock	Data sheet	UNR411F00A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	NS-B1
Other Names	UN411F-(TA) UNR411F00ATB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	80MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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Part Number	UNR411F00A	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 300MW NS-B1	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4234 pcs stock	Data sheet	UNR411F00A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	NS-B1
Other Names	UN411F-(TA) UNR411F00ATB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	80MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA