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UNR511600L

UNR511600L

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Panasonic

Part Number:: UNR511600L

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS PNP 150MW SMINI3

Datasheets:: UNR511600L.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 981472 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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UNR511600L

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Specifications of UNR511600L

Panasonic

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Part Number	UNR511600L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 150MW SMINI3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	981472 pcs stock	Data sheet	UNR511600L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SMini3-G1
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SC-70, SOT-323	Other Names	UN5116-(TX) UN5116-TX UN5116TR UN5116TR-ND UNR511600LTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	150MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150MHz 150mW Surface Mount SMini3-G1	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	UNR511600L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 150MW SMINI3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	981472 pcs stock	Data sheet	UNR511600L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SMini3-G1
Series	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SC-70, SOT-323	Other Names	UN5116-(TX) UN5116-TX UN5116TR UN5116TR-ND UNR511600LTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	150MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150MHz 150mW Surface Mount SMini3-G1	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA