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DTB123ESTP

DTB123ESTP

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LAPIS Semiconductor

Part Number:: DTB123ESTP

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS PNP 300MW SPT

Datasheets:: DTB123ESTP.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5717 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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DTB123ESTP

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Specifications of DTB123ESTP

LAPIS Semiconductor

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Part Number	DTB123ESTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5717 pcs stock	Data sheet	DTB123ESTP.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SPT
Series	-	Resistor - Emitter Base (R2)	2.2 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	SC-72 Formed Leads
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT	DC Current Gain (hFE) (Min) @ Ic, Vce	39 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA
Base Part Number	DTB123

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Part Number	DTB123ESTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5717 pcs stock	Data sheet	DTB123ESTP.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SPT
Series	-	Resistor - Emitter Base (R2)	2.2 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	SC-72 Formed Leads
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT	DC Current Gain (hFE) (Min) @ Ic, Vce	39 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA
Base Part Number	DTB123