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UNR421800A

UNR421800A

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Panasonic

Part Number:: UNR421800A

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS NPN 300MW NS-B1

Datasheets:: UNR421800A.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 483115 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 483115 pcs Reference Price(In US Dollars)

5000 pcs
$0.041

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UNR421800A

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Specifications of UNR421800A

Panasonic

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Part Number	UNR421800A	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 300MW NS-B1	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	483115 pcs stock	Data sheet	UNR421800A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	5.1 kOhms
Resistor - Base (R1)	510 Ohms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	NS-B1
Other Names	UN4218-(TA) UNR421800ATB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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Part Number	UNR421800A	Manufacturer	Panasonic
Description	TRANS PREBIAS NPN 300MW NS-B1	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	483115 pcs stock	Data sheet	UNR421800A.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	NS-B1
Series	-	Resistor - Emitter Base (R2)	5.1 kOhms
Resistor - Base (R1)	510 Ohms	Power - Max	300mW
Packaging	Tape & Reel (TR)	Package / Case	NS-B1
Other Names	UN4218-(TA) UNR421800ATB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	150MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA