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RN1409,LF

RN1409,LF

RN1409,LF
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1409,LF
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 50V 0.2W SMINI
Datasheets:
RN1409,LF.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1798365 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1798365 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.013
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RN1409,LF

Specifications of RN1409,LF

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN1409,LF Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V 0.2W SMINI Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1798365 pcs stock Data sheet RN1409,LF.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package S-Mini
Series - Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 47 kOhms Power - Max 200mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Other Names RN1409(TE85L,F)
RN1409(TE85LF)TR
RN1409(TE85LF)TR-ND
RN1409,LF(B
RN1409,LF(T
RN1409LF(BTR
RN1409LF(BTR-ND
RN1409LFTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 12 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
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