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DTC123JU3T106

DTC123JU3T106

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LAPIS Semiconductor

Part Number:: DTC123JU3T106

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: NPN 100MA 50V DIGITAL TRANSISTOR

Datasheets:: DTC123JU3T106.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1575811 pcs stock

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DTC123JU3T106

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Specifications of DTC123JU3T106

LAPIS Semiconductor

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Part Number	DTC123JU3T106	Manufacturer	LAPIS Semiconductor
Description	NPN 100MA 50V DIGITAL TRANSISTOR	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1575811 pcs stock	Data sheet	DTC123JU3T106.pdf
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Transistor Type	NPN - Pre-Biased + Diode
Supplier Device Package	UMT3	Series	-
Resistor - Emitter Base (R2)	47 kOhms	Resistor - Base (R1)	2.2 kOhms
Power - Max	200mW	Packaging	Cut Tape (CT)
Package / Case	SC-70, SOT-323	Other Names	DTC123JU3T106CT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	7 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	100mA

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Part Number	DTC123JU3T106	Manufacturer	LAPIS Semiconductor
Description	NPN 100MA 50V DIGITAL TRANSISTOR	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1575811 pcs stock	Data sheet	DTC123JU3T106.pdf
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Transistor Type	NPN - Pre-Biased + Diode
Supplier Device Package	UMT3	Series	-
Resistor - Emitter Base (R2)	47 kOhms	Resistor - Base (R1)	2.2 kOhms
Power - Max	200mW	Packaging	Cut Tape (CT)
Package / Case	SC-70, SOT-323	Other Names	DTC123JU3T106CT
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	7 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	100mA