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RN1115MFV,L3F

RN1115MFV,L3F

RN1115MFV,L3F
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1115MFV,L3F
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 50V SOT723
Datasheets:
RN1115MFV,L3F.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
2719871 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 2719871 pcs Reference Price(In US Dollars)

  • 8000 pcs
    $0.01
  • 16000 pcs
    $0.008
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RN1115MFV,L3F
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RN1115MFV,L3F

Specifications of RN1115MFV,L3F

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN1115MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V SOT723 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2719871 pcs stock Data sheet RN1115MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package VESM
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 2.2 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-723
Other Names RN1115MFV,L3F(B
RN1115MFV,L3F(T
RN1115MFVL3FTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA  
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