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RN1309(TE85L,F)

RN1309(TE85L,F)

RN1309(TE85L,F)
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
RN1309(TE85L,F)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PREBIAS NPN 0.1W USM
Datasheets:
RN1309(TE85L,F).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
862049 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 862049 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.107
  • 10 pcs
    $0.096
  • 25 pcs
    $0.069
  • 100 pcs
    $0.054
  • 250 pcs
    $0.034
  • 500 pcs
    $0.029
Target Price(USD):
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Total: $0.000
RN1309(TE85L,F)
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RN1309(TE85L,F)

Specifications of RN1309(TE85L,F)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number RN1309(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W USM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 862049 pcs stock Data sheet RN1309(TE85L,F).pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package USM
Series - Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 47 kOhms Power - Max 100mW
Packaging Cut Tape (CT) Package / Case SC-70, SOT-323
Other Names RN1309(TE85LF)CT Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA  
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