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DTD743EETL

DTD743EETL

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LAPIS Semiconductor

Part Number:: DTD743EETL

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS NPN 150MW EMT3

Datasheets:: DTD743EETL.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 557437 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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DTD743EETL

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Specifications of DTD743EETL

LAPIS Semiconductor

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Part Number	DTD743EETL	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 150MW EMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	557437 pcs stock	Data sheet	DTD743EETL.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	EMT3
Series	-	Resistor - Emitter Base (R2)	4.7 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	SC-75, SOT-416
Other Names	DTD743EETLCT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	260MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 30V 200mA 260MHz 150mW Surface Mount EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	115 @ 100mA, 2V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	200mA	Base Part Number	DTD743

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Part Number	DTD743EETL	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 150MW EMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	557437 pcs stock	Data sheet	DTD743EETL.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	EMT3
Series	-	Resistor - Emitter Base (R2)	4.7 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	SC-75, SOT-416
Other Names	DTD743EETLCT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	260MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 30V 200mA 260MHz 150mW Surface Mount EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	115 @ 100mA, 2V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	200mA	Base Part Number	DTD743