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NSVMMUN2135LT1G

NSVMMUN2135LT1G

NSVMMUN2135LT1G
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See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
NSVMMUN2135LT1G
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS PNP BIPO 50V SOT23-3
Datasheets:
NSVMMUN2135LT1G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
949066 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 949066 pcs Reference Price(In US Dollars)

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NSVMMUN2135LT1G
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Specifications of NSVMMUN2135LT1G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number NSVMMUN2135LT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP BIPO 50V SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 949066 pcs stock Data sheet NSVMMUN2135LT1G.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type PNP - Pre-Biased Supplier Device Package SOT-23-3 (TO-236)
Series Automotive, AEC-Q101 Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms Power - Max 246mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 36 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
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