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FJNS3212RBU

FJNS3212RBU

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AMI Semiconductor / ON Semiconductor

Part Number:: FJNS3212RBU

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS PREBIAS NPN 300MW TO92S

Datasheets:: FJNS3212RBU.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5343 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of FJNS3212RBU

AMI Semiconductor / ON Semiconductor

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Part Number	FJNS3212RBU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS NPN 300MW TO92S	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5343 pcs stock	Data sheet	FJNS3212RBU.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	TO-92S
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	300mW	Packaging	Bulk
Package / Case	TO-226-3, TO-92-3 Short Body	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92S
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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Part Number	FJNS3212RBU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS NPN 300MW TO92S	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5343 pcs stock	Data sheet	FJNS3212RBU.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	TO-92S
Series	-	Resistor - Base (R1)	47 kOhms
Power - Max	300mW	Packaging	Bulk
Package / Case	TO-226-3, TO-92-3 Short Body	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92S
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA