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RN1307,LF

RN1307,LF

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Toshiba Semiconductor and Storage

Part Number:: RN1307,LF

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: X34 PB-F USM TRANSISTOR PD 100MW

Datasheets:: RN1307,LF.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1659875 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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RN1307,LF

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Specifications of RN1307,LF

Toshiba Semiconductor and Storage

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Part Number	RN1307,LF	Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F USM TRANSISTOR PD 100MW	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1659875 pcs stock	Data sheet	RN1307,LF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	USM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	100mW
Package / Case	SC-70, SOT-323	Other Names	RN1307LF
Mounting Type	Surface Mount	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	RN1307,LF	Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F USM TRANSISTOR PD 100MW	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1659875 pcs stock	Data sheet	RN1307,LF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	USM
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	100mW
Package / Case	SC-70, SOT-323	Other Names	RN1307LF
Mounting Type	Surface Mount	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA