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RN2130MFV,L3F

RN2130MFV,L3F

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Toshiba Semiconductor and Storage

Part Number:: RN2130MFV,L3F

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: X34 PB-F VESM TRANSISTOR PD 150M

Datasheets:: RN2130MFV,L3F.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 2082207 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 2082207 pcs Reference Price(In US Dollars)

8000 pcs
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RN2130MFV,L3F

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Specifications of RN2130MFV,L3F

Toshiba Semiconductor and Storage

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Part Number	RN2130MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F VESM TRANSISTOR PD 150M	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2082207 pcs stock	Data sheet	RN2130MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	100 kOhms
Resistor - Base (R1)	100 kOhms	Power - Max	150mW
Package / Case	SOT-723	Other Names	RN2130MFVL3F
Mounting Type	Surface Mount	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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Part Number	RN2130MFV,L3F	Manufacturer	Toshiba Semiconductor and Storage
Description	X34 PB-F VESM TRANSISTOR PD 150M	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2082207 pcs stock	Data sheet	RN2130MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	VESM
Series	-	Resistor - Emitter Base (R2)	100 kOhms
Resistor - Base (R1)	100 kOhms	Power - Max	150mW
Package / Case	SOT-723	Other Names	RN2130MFVL3F
Mounting Type	Surface Mount	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA