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PDTC114YS,126

PDTC114YS,126

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Part Number:: PDTC114YS,126

Manufacturer/Brand:: N/A

Product Description:: TRANS PREBIAS NPN 500MW TO92-3

Datasheets:

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5182 pcs stock

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PDTC114YS,126

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Specifications of PDTC114YS,126

PDTC114YS,126

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Part Number	PDTC114YS,126	Manufacturer	NXP Semiconductors / Freescale
Description	TRANS PREBIAS NPN 500MW TO92-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5182 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	TO-92-3
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	500mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names	934057566126 PDTC114YS AMO PDTC114YS AMO-ND	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 5V
Current - Collector Cutoff (Max)	1µA	Current - Collector (Ic) (Max)	100mA
Base Part Number	PDTC114

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Part Number	PDTC114YS,126	Manufacturer	NXP Semiconductors / Freescale
Description	TRANS PREBIAS NPN 500MW TO92-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5182 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	TO-92-3
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	500mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names	934057566126 PDTC114YS AMO PDTC114YS AMO-ND	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 5V
Current - Collector Cutoff (Max)	1µA	Current - Collector (Ic) (Max)	100mA
Base Part Number	PDTC114