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FJP13009

FJP13009

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• Specifications

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AMI Semiconductor / ON Semiconductor

Specifications of FJP13009

AMI Semiconductor / ON Semiconductor

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Part Number	FJP13009	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 400V 12A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5217 pcs stock	Data sheet	1.FJP13009.pdf2.FJP13009.pdf
Voltage - Collector Emitter Breakdown (Max)	400V	Vce Saturation (Max) @ Ib, Ic	3V @ 3A, 12A
Transistor Type	NPN	Supplier Device Package	TO-220-3
Series	-	Power - Max	100W
Packaging	Tube	Package / Case	TO-220-3
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	4MHz	Detailed Description	Bipolar (BJT) Transistor NPN 400V 12A 4MHz 100W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5A, 5V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	12A	Base Part Number	FJP13009

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• Part Number	FJP13009	Manufacturer	AMI Semiconductor / ON Semiconductor
  Description	TRANS NPN 400V 12A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Quantity Available	5217 pcs stock	Data sheet	1.FJP13009.pdf2.FJP13009.pdf
  Voltage - Collector Emitter Breakdown (Max)	400V	Vce Saturation (Max) @ Ib, Ic	3V @ 3A, 12A
  Transistor Type	NPN	Supplier Device Package	TO-220-3
  Series	-	Power - Max	100W
  Packaging	Tube	Package / Case	TO-220-3
  Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
  Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Frequency - Transition	4MHz	Detailed Description	Bipolar (BJT) Transistor NPN 400V 12A 4MHz 100W Through Hole TO-220-3
  DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5A, 5V	Current - Collector Cutoff (Max)	-
  Current - Collector (Ic) (Max)	12A	Base Part Number	FJP13009

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